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| RB160L-60 Diodes Schottky barrier diode RB160L-60 !Applications High frequency rectification For switching power supply. !External dimensions (Units : mm) 1.50.2 CATHODE MARK !Features 1) Compact power mold (PMDS) 2) Low VF. (VF=0.55V Typ. at 1A) 3) High reliability 2.60.2 4.50.2 1.20.3 0.1 +0.02 -0.1 2.00.2 !Construction Silicon epitaxial Planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 Date of manufacture EX. RB160L-604,4 Manufacture years EX. 1999.79,7 !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current * Symbol VRM VR IO IFSM Tj Tstg Limits 60 60 1 30 125 -40 +125 Unit V V A A C C Peak forward surge current Junction temperature Storage temperature * When mounted on a PCBs board !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.58 0.5 Unit V mA IF = 1.0A VR = 60V Conditions 5.00.3 RB160L-60 Diodes !Electrical characteristic curves (Ta = 25C) 10 FORWARD CURRENT : IF (A) 10m TERMINAL CAPACITANCE : CT (PF) 1n 1 REVERSE CURRENT : IR (A) 1m 125C 100 10 1 25C 100n 10n 1n 0 -25C 75C 100m - 25 C 100 12 5 C 75 C 10m 25 C 1m 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 20 30 40 50 60 70 10 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics AVERAGE RECTIFIED FOWARD CURRENT : Io (A) 2.0 AVERAGE RECTIFIED FOWARD CURRENT : Io (A) 2.0 DC D=0.8 D=0.5 1.0 sine wave D=0.3 D=0.2 D=0.1 D=0.05 D=Tp / T VR=VRM / 2 DC D=0.8 D=0.5 1.0 sine wave D=0.3 D=0.2 D=0.1 D=0.05 D=Tp / T VR=VRM / 2 0.0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) 0.0 0 25 50 75 100 125 CASE TEMPERATURE : Tc(C) Fig.4 Derating curve (lo-Ta) Fig.5 Derating curve (lo-Tc) |
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